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Investigation of Carrier Transport Mechanism in High Mobility ZnON Thin-Film Transistors
23
Citations
27
References
2016
Year
SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesZnon TftElectronic MaterialsCarrier Transport MechanismEngineeringOxide ElectronicsApplied PhysicsQuantum MaterialsTemperature DependenceSubthreshold RegionThin FilmsCharge Carrier TransportCharge TransportSemiconductor Device
In this letter, the carrier transport mechanism in a high-mobility zinc oxynitride (ZnON) thin-film transistor (TFT) is investigated by analyzing the gate bias and temperature dependence of conductance and intrinsic field-effect mobility ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu _{\mathrm {FEi}})$ </tex-math></inline-formula> in the subthreshold and above-threshold regions, respectively. The measured drain currents increase with a temperature and show a thermally activated Arrhenius-like behavior in the subthreshold region. The experimental results are well explained using a Meyer–Neldel rule, which suggests that the trap-limited conduction is the dominant carrier transport mechanism in the ZnON TFT in the subthreshold region. The carrier transport mechanism in the ZnON TFT in the above-threshold region is investigated by examining the gate overdrive voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {OV}})$ </tex-math></inline-formula> and temperature dependence of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu _{\mathrm {FEi}}$ </tex-math></inline-formula> . <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu _{\mathrm {FEi}}$ </tex-math></inline-formula> extracted from the ZnON TFT decreases with an increase in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$V_{\mathrm {OV}}$ </tex-math></inline-formula> and temperature, which suggests that the phonon scattering is the most probable mechanism limiting <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu _{\mathrm {FEi}}$ </tex-math></inline-formula> in the ZnON TFT in the above-threshold region.
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