Reliability characteristics, including NBTI, of polysilicon gate HfO/sub 2/ MOSFET's

Abstract

The performance of polysilicon gate HfO/sub 2/ MOSFET's is discussed in terms of gate leakage current and the effects of NH/sub 3/ surface nitridation on boron penetration and carrier mobility. Negative bias temperature instability (NBTI) on HfO/sub 2/ PMOSFET's was evaluated for the first time. Although surface nitridation enhanced NBTI degradation, HfO/sub 2/ PMOSFET's without nitridation show sufficient NBTI immunity.