A record high 150 GHz f/sub max/ realized at 0.18 μm gate length in an industrial RF-CMOS technology

L.F. Tiemeijer, H. M. J. Boots, R.J. Havens, A.J. Scholten, P.H.W. de Vreede, P.H. Woerlee, A. Heringa, D.B.M. Klaassen

2002 · 33 citations · 0 references

Concepts

Abstract

We demonstrate that by careful layout optimisation, particularly aimed at reducing the effective gate resistance, a record high maximum oscillation frequency f/sub max/ of 150 GHz can be obtained for an industrial 0.18 /spl mu/m CMOS process showing a cut-off frequency f/sub T/ of 70 GHz. A very low minimum noise figure and good suppression of the substrate noise using a guard-ring is also shown.