COM2 SiGe modular BiCMOS technology for digital, mixed-signal, and RF applications

Abstract

The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16 /spl mu/m COM2 digital CMOS process which features 1.5 V NMOS and PMOS transistors with 2.4 nm gate oxide, 0.135 /spl mu/m gate length, and up to 7 metal levels. Technology enhancement modules including dense SRAM, SiGe NPN bipolar transistor, and a variety of passive components have been developed to allow the COM2 technology to be cost-effectively optimized for a wide range of applications.