Publication | Closed Access
Demonstration of a sub-0.03 um<sup>2</sup>high density 6-T SRAM with scaled bulk FinFETs for mobile SOC applications beyond 10nm node
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2016
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Low-power ElectronicsScaled Bulk FinfetsElectrical EngineeringMobile Soc ApplicationsEngineeringVlsi DesignTechnology ScalingApplied PhysicsSemiconductor MemoryFunctional 32MbHigh Density SramMicroelectronicsBeyond CmosFinfet Devices
For the first time, we demonstrate the smallest, fully functional 32Mb 6-T high density SRAM reported in literature with scaled bulk FinFETs for CMOS technology beyond 10nm node. Scaled FinFET devices exhibit excellent electrostatic with DIBL of <45mV/V and sub-threshold swing of <65mV/decade and competitive drive current. Static noise margin of ∼90mV for the high density SRAM operated down to 0.45V is achieved.