Temperature sense effect in HCI self-heating de convolution: Application to 28nm FDSOI

Abstract

The introduction of new architecture such as finfet and FDSOI triggered many discussion around self-heating in confined MOS transistor devices. Not only self-heating challenges performance itself (reduced mobility) abut also circuit lifetime projection. On one hand occurrence self-heating during circuit operation might accelerate device degradation, on the other hand it also affects accelerated life tests such as HCI. We show in this paper that proposed methods to decorrelate self-heating from HCI stress might be affected by a systematic error due to a misinterpretation of apparent thermal activation energy.