A 12.7dBm IIP3, 1.34dB NF, 4.9GHz–5.9GHz 802.11a/n LNA in 0.13 µm PD-SOI CMOS with Body-Contacted transistor

Abstract

This paper presents a fully integrated 802.11a/n LNA. Unlike published SOI LNAs, Body-Contacted transistor has been chosen for its superior linearity performance. Traditional drawback of Body-Contacted transistor is Gate to Body parasitic capacitance impacting the NF; it has been minimized through optimized layout. The paper highlights Body-Contact interest before going through LNA optimization, including transistor sizing, high Q inductors implementation and layout. The LNA is processed in STMicroelectronics 0.13-µm partially-depleted silicon-on-insulator (PD-SOI) CMOS with 1.2V supply voltage. The LNA provides 12.7dBm IIP3 high linearity, for a 9dB gain, 1.34dB NF for 9.6mW power consumption.