Electronics Letters · 1990 · 11 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor MaterialsDopingLaser OpticsLaser PhysicsOptical Properties Of SemiconductorsOptical SourcesSemiconductor LasersBandwidthCarrier LifetimeDifferential GainGainLasersOptical GainOptical Gain In SemiconductorsOptical Gain Materials
We report on the performance of GaInAsP/InP DFB lasers with Zn-doped active region. At both 1.3 and 1.55μm we achieved a large bandwidth owing to the increased differential gain. The carrier lifetime of the lasers decreased with doping level. The decreased carrier lifetime had the effect of reducing the pattern effect, and we could obtain a clear eye opening with 4Gbit/s NRZ modulation.
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