Experimental investigation of 650V superjunction IGBTs

Abstract

650V superjunction IGBTs have been fabricated. Depending on IGBT structures as well as process conditions, competitive trade-off performances have been observed. V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">cesat</sub> of 1.4V and tf around 35 ns at the collector current density of 250A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> were obtained with the prototype of superjunction FS IGBT. The superjunction NPT IGBT also shows tf of 35ns with V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">cesat</sub> of 1.9V, which is superior to the conventional trench FS IGBT. Integrating the superjunction technology into IGBT, we demonstrated that the superjunction IGBT is a viable IGBT technology option as a next generation IGBT technology.