Submicron wiring technology with tungsten and planarization

Abstract

A submicron wiring technology has been designed, built, and proven reliable. This fully integrated technology features CVD-tungsten (W) and planarization. Vertical W studs maximize density by reducing contact/via ground rules and by facilitating the use of thick insulators for minimum capacitance. Complementary insulator and W planarization eliminate steps and ease patterning. As a result, circuit performance is enhanced without sacrificing yield or reliability.