Applied Physics Letters · 2016 · 19 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceOptical MaterialsOptoelectronicsSemiconductor MaterialsInfrared DetectorsInfrared Optical MaterialsOptical DetectorsOptical Properties Of SemiconductorsPhotodetectorsSemiconductor DetectorsAbsorber MaterialsDark CurrentDetector Quantum EfficiencyDetectorsExternal Quantum EfficiencyQuantum EfficiencySemiconductor Infrared MaterialsSuperlattice Materials
Growth and characteristics of mid-wave infrared (MWIR) InGaAs/InAsSb strained layer superlattice (SLS) detectors are reported. InGaAs/InAsSb SLSs, identified as ternary SLSs, not only provide an extra degree of freedom for superlattice strain compensation but also show enhanced absorption properties compared to InAs/InAsSb SLSs. Utilizing In1-yGayAs/InAs0.65Sb0.35 ternary SLSs (y = 0, 5, 10, and 20%) designed to have the same bandgap, a set of four unipolar detectors are investigated. These demonstrate an enhancement in the detector quantum efficiency due to the increased absorption coefficient. The detectors exhibit dark current performance within a factor of 10 of Rule 07 at temperatures above 120 K, and external quantum efficiencies in the 15%–25% range. This work demonstrates ternary SLSs are a potential absorber material for future high performance MWIR detectors.
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Elizabeth H. Steenbergen, Blair C. Connelly, Grace D. Metcalfe et al. · Applied Physics Letters · 2011 · 306 citations
High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
F. Fuchs, U. Weimer, W. Pletschen et al. · Applied Physics Letters · 1997 · 213 citations