Silicon Carbide Recrystallization Mechanism by Non-Equilibrium Melting Laser Anneal

Abstract

We have demonstrated the possibility for epitaxial regrowth of crystalline SiC by laser melt annealing. The quality of the recrystallization is analyzed by XTEM, EELS, electron diffraction and XRD. The annealing guarantees a uniform activation achieved both in melting and solid phase. Carbon graphitization on the top surface and a crystallized silicon layer below is observed as an effect of the high temperature and the melting phase.