Journal of Applied Physics · 2016 · 10 citations · 23 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsMaterials PhysicsSemiconductor MaterialsElectron-phonon InteractionsMetal OxidesNanowiresOxide SemiconductorsRaman SpectroscopySemiconductor NanomaterialsDoped SemiconductorsOxygen Concentration EffectsPhotoluminescenceRaman ScatteringResonant ScatteringStructural DefectsZinc Oxide NanostructuresZinc Oxides
We have studied the photoluminescence emission line at 3.31 eV in ZnO nanowires. In undoped ZnO, this band strongly depends on high oxygen concentration and could originate from recombination of bound-exciton complex related to structural defects. Conversely, in doped ones, the photoluminescence emission appears notably at a low VI/II ratio and with the emergence of donor-acceptor pair emission due to the presence of α-No nitrogen complex, which acts as a shallow acceptor in ZnO. We found that this band corresponds to 3LO, the third phonon replica of resonant Raman scattering. Furthermore, a remarkable variation is detected in a number of resonant Raman scattering multiphonons.
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Bound exciton and donor–acceptor pair recombinations in ZnO
Bertrand Meyer, H. Alves, D.M. Hofmann et al. · physica status solidi (b) · 2004 · 1.6K citations
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