Magnetoelectric and magnetoresistive properties of the Сe<i>_x</i>Mn_1-<i>x</i>S semiconductors

Abstract

The effect of electron doping on the magnetoelectric and magnetoresistivity properties of cation-substituted antiferromagnetic СexMn1–xS (x ≤ 0.05) semiconductors at temperatures of 77–500 K in magnetic fields of up to 10 kOe was investigated. For all the compositions shifts of the temperature of the dielectric loss maximum toward higher temperature (80–500 K) with increasing magnetic field up to 10 kOe are found. The current dependence of magnetoresistance from the I–V characteristic measured in a magnetic field was established. The increase of the magnetoresistive effect with increase of the cerium ions concentration in the СexMn1–xS is found. The type of current carriers was determined on the basis of the Hall coefficient measurement. For explanation of experimental data the model of charge-orbital ordering, including orbital glass is used.