G. S. Svechnikov - Concepedia

Author

G. S. Svechnikov

Frantsevich Institute for Problems in Materials Science ORCID

Also Known As

G S Svechnikov, G Svechnikov, G. S. Svechnikov, G. Svechnikov, G.S Svechnikov, G.S. Svechnikov, George S. Svechnikov, George S. Svechnikov Svechnikov, George Svechnikov, Svechnikov, G. S.

Publications

992

Citations

H-Index

Concepts

All Affiliations

Frantsevich Institute for Problems in Materials Science Oak Ridge National Laboratory National Academy of Sciences of Ukraine V.E. Lashkaryov Institute of Semiconductor Physics Institute of Physics

About

G. S. Svechnikov is an author at Frantsevich Institute for Problems in Materials Science specializing in engineering, applied physics, and condensed matter physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	9	9	347
2	Applied Physics	8	8	321
3	Chemistry	3	3	112
4	Electrical Engineering	3	3	170
5	Natural Sciences	2	2	61

G. S. Svechnikov

Publications

815

Citations

H-Index

Page 1

	Year	Citations
Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors Eugene А. Eliseev, Anna N. Morozovska, G. S. Svechnikov, Physical Review B	2011	244
Domain wall conduction in multiaxial ferroelectrics Eugene А. Eliseev, Anna N. Morozovska, G. S. Svechnikov, Physical Review B EngineeringPolarization VectorCharge TransportMultiferroicsFerroelectric Application	2012	96
Atomically Resolved Mapping of Polarization and Electric Fields Across Ferroelectric/Oxide Interfaces by Z‐contrast Imaging Hye Jung Chang, Sergei V. Kalinin, Anna N. Morozovska, Advanced Materials	2011	86
Pyroelectric response of ferroelectric nanowires: Size effect and electric energy harvesting Anna N. Morozovska, Eugene А. Eliseev, G. S. Svechnikov, Journal of Applied Physics	2010	82
Interface dipole between two metallic oxides caused by localized oxygen vacancies Albina Y. Borisevich, Andrew R. Lupini, Jun He, Physical Review B Oxygen VacanciesEngineeringCation DisplacementsLocalized Oxygen VacanciesChemistry	2012	63
Screening and retardation effects on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>180</mml:mn><mml:mo>°</mml:mo></mml:mrow></mml:math>-domain wall motion in ferroelectrics: Wall velocity and nonlinear dynamics due to polarization-screening charge interactions Eugene А. Eliseev, Anna N. Morozovska, G. S. Svechnikov, Physical Review B EngineeringDead Layer ThicknessRetardation EffectsCharge TransportPolarization-screening Charge Interactions	2008	50
Effect of temperature variation on shift and broadening of the exciton band in Cs3Bi2I9 layered crystals V. F. Machulin, F. V. Motsnyǐ, Oleksandr M. Smolanka, Low Temperature Physics Materials ScienceTemperature VariationTransition Metal ChalcogenidesEngineeringPhysics	2004	45
Frequency dependent dynamical electromechanical response of mixed ionic-electronic conductors Anna N. Morozovska, Eugene А. Eliseev, S. L. Bravina, Journal of Applied Physics	2012	33
ZnS:Mn electroluminescent films prepared from chelate metal organic compounds L. V. Zavyalova, Aliaksandr Savin, G. S. Svechnikov Displays Organic Charge-transfer CompoundInorganic ChemistryEngineeringOrganic ElectrochemistryOrganic Electronics	1997	26
Phase diagram and domain splitting in thin ferroelectric films with incommensurate phase Anna N. Morozovska, Eugene А. Eliseev, Jianjun Wang, Physical Review B Materials ScienceSemiconductorsMultiferroicsFerromagnetismElectrical Engineering	2010	24

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