IEEE Journal on Emerging and Selected Topics in Circuits and Systems · 2016 · 160 citations · 72 references
EngineeringComputer EngineeringElectrical EngineeringElectronic MaterialsMemoryMicroelectronicsMemory DevicesMemory Subsystem DesignMemory SystemsMemristive MaterialsSpintronicsFerroelectric Random-access MemoryMemristive MemoryNonvolatile MemoryNonvolatile Memory DevicesRandom Access Memory (Ram)Random-access MemoryResistive Random-access MemorySpin-transfer Torque Memory
This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-torque-transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.
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Nanoionics-based resistive switching memories
Rainer Waser, Masakazu Aono · Nature Materials · 2007 · 4.8K citations
Natural Sciences, Materials Engineering, Materials Science +12
Tunneling between ferromagnetic films
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