An Overview of Nonvolatile Emerging Memories— Spintronics for Working Memories

Tetsuo Endoh, Hiroki Koike, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno

IEEE Journal on Emerging and Selected Topics in Circuits and Systems · 2016 · 160 citations · 72 references

Concepts

Abstract

This paper reviews emerging nonvolatile random access memories (RAM) in recent years. It first benchmarks ferroelectric RAM (FeRAM), phase change RAM (PCRAM), resistive RAM (ReRAM), and spin-torque-transfer magnetic RAM (STT-MRAM), discussing each RAM's features and its applications. Then current status of spintronics developments including not only STT-MRAM but also nonvolatile logic LSI is described, which are particularly suitable for working memory applications.

References

72