A Buried Ridge Stripe Structure InGaAsP-Si Hybrid Laser

Abstract

A buried ridge stripe (BRS) structure InGaAsP-Si hybrid laser based on selective area metal bonding (SAMB) method is demonstrated. This novel hybrid laser structure combines the SAMB method's advantage of low bonding requirements and great flexibility and the BRS lasers' low threshold, high thermal performance, and good optical field and carrier confinement. The 300-$\mu $ m-long hybrid laser has a threshold current of 14 mA and a maximum single-facet output power of 5.4 mW at room temperature, with a slope efficiency of 0.17 W/A. The laser has a characteristic temperature of 50 K, with continuous wave operation at temperature >50 °C.