Optics Express · 2006 · 204 citations · 11 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesIntegrated OpticsIntegrated PhotonicsLaser DiodesOptical WaveguidesOptoelectronic DevicesPhotodetectorsEpitaxial Thin FilmsIntegrated Optical WaveguidesIntegrated PhotodetectorsIntegrated Waveguide CircuitsIntegrated WaveguidesSemiconductor Laser DiodesSilicon-on-insulator TechnologyWaveguide Integration
Laser emission from an InP/InGaAsP thin film epitaxial layer bonded to a Silicon-on-Insulator waveguide circuit was observed. Adhesive bonding using divinyl-tetramethyldisiloxane-benzocyclobutene (DVS-BCB) was used to integrate the InP/InGaAsP epitaxial layers onto the waveguide circuit. Light is coupled from the laser diode into an underlying waveguide using an adiabatic inverted taper approach. 0.9mW optical power was coupled into the SOI waveguide using a 500mum long laser. Besides for use as a laser diode, the same type of devices can be used as a photodetector. 50mum long devices obtained a responsivity of 0.23A/W.
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