2014 · 15 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesWireless CommunicationsChip PackagingHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMillimeter-wave CommunicationsRadio-frequency Integrated CircuitsHigh-frequency ElectronicsMillimeter-wave Integrated CircuitsPackaging For High-frequency DevicesRadio Frequency TransceiversRadio-frequency DevicesRadio-frequency PackagingTransceiver DesignWafer-level Packaging
In this paper three chipsets for mobile backhaul application in the V and E-band are presented. The chips are fabricated in a 170GHz fT SiGe production technology and housed in a wafer level package, eWLB. The three devices share the same silicon front-end. They show the same size, same architecture, and same pin interface. Thus, they enable cost efficient system designs from 57 up 86GHz. Moreover, for the first time, a packaged device is used in those wireless applications up to 86GHz. The transceiver chip features a push-push VCO showing a PNssb lower than -80dBc/Hz at 100kHz offset in the whole frequency range of interest. The NF of the Rx is lower than 8dB, including the loss of the package. Supplied with 3.3V, the chip consumes 1.6W in Tx mode and 1.1W in Rx mode.
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A 60GHz 16QAM/8PSK/QPSK/BPSK direct-conversion transceiver for IEEE 802.15.3c
Kenichi Okada, Kota Matsushita, Keigo Bunsen et al. · 2011 · 215 citations