A low-power 57-to-66GHz transceiver in 40nm LP CMOS with −17dB EVM at 7Gb/s

Vojkan Vidojković, Giovanni Mangraviti, Khaled Khalaf, Viki Szortyka, Kristof Vaesen, Wim Van Thillo, Bertrand Parvais, Mike Libois, S. Thijs, John R. Long,

2012 · 44 citations · 7 references

Concepts

Abstract

Obtaining sufficient EVM in all four 1.76GHz bandwidth chann1.76GHzels specified by IEEE 802.15.3c and the emerging 802.11ad high-data-rate wireless communication standards for modulations as complex as QAM16 is a challenge. Recently reported implementations are therefore restricted to just 1 or 2 channels. Wireless applications often use digital low-power (LP) CMOS technology to implement single-chip transceivers. The high V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">t</sub> and the thin metal interconnect layers constrain the mm-Wave circuit performance. This paper presents a digital LP 40nm CMOS 60GHz transceiver (TRX) IC that obtains an EVM better than -17dB in all 4 channels.

References

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