Japanese Journal of Applied Physics · 1980 · 35 citations · 0 references
EngineeringOptoelectronic DevicesSemiconductor DeviceSemiconductorsJunction Formation MechanismIon ImplantationElectronic DevicesMolecular Beam EpitaxyIon EmissionSemiconductor TechnologyElectrical EngineeringCrystalline DefectsPhysicsSemiconductor MaterialIon Implantation StudyApplied PhysicsLight Atom SpeciesOptoelectronicsGraded Junction Profile
Light atom species, such as Li, Mg, B, Be, Cl, F and Al implanted in bulk and epitaxial HgCdTe of compositions from 3 to 12 µm cut-off yielded n/p junctions. The nature of these junctions has not previously been understood. Implantation of light atoms has been observed to induce n-type electrically active defects which propagate deep into the material during the implantation process. The experiments, performed on an epitaxial wafer of ∼5 µm cut-off wavelength, showed an electron profile of the implanted layer 3 to 4 times deeper than the mean projected range determined by SIMS measurements. The results are in good agreement with the graded junction profile determined from C-V measurement, and have junction depths of 2–3 µm determined from EBIC measurements. It has been concluded that the junction formation mechanism in HgCdTe is determined primarily by radiation induced mobile defects.