Japanese Journal of Applied Physics · 1982 · 15 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsMicrofabricationSemiconductor DevicesImplantable MicrodevicesIon ImplantationDopant ImplantationField IonizationIon Source DesignProcess SimplificationSiliconSimplification
The use of a focused ion beam for direct implantation of dopants into a semiconductor substrate results in appreciable simplification in the processing of semiconductor devices. We have demonstrated that liquid metal (LM) field-ionization sources (based upon the electrostatic formation of an emitting cusp of liquid metal) offer the necessary high brightness to make focused ion beam microfabrication feasible. This paper reports upon three developments: (1) the development of eutectic-alloy LM ion sources for the production of boron and arsenic for direct implantation of silicon devices, (2) the fabrication of a FET using a Au–Si beam that was mass separated at the target and (3) the development of a three-lens variable-energy focusing column that incorporates a mass-separator of low aberration.