A CNTFET amplifier with 5.6 dB gain operating at 460–590 MHz

Abstract

In this paper we present a Carbon Nano-Tube Field Effect Transistor (CNTFET) amplifier. As the miniaturization trend of electronic devices continues the industry seeks alternative technologies and CNTFETs have the potential to succeed in this emerging trend. To demonstrate the feasibility of using CNTFETs as an active element for RF circuits we have designed, implemented and characterized an amplifier on standard FR-4 substrate with the use of off-the-shelf SMD (Surface Mount Devices) components. In this work, we present the characterization of the employed device and the performance of an amplifier operating at 538 MHz with 5.6 dB of gain and excellent matching of -21 dB.