Precise Control of Annealed Wafer For Nanometer Devices

Abstract

In the nanometer device era, surface morphology of atomic level becomes one of critical issues for device performance. The surface morphology of atomic level was evaluated in various wafer types and surface indexes. It was found that a hydrogen anneal wafer has the largest terrace comparing to other wafers. It is possible to control the terrace width by adjusting the off angle and azimuth. The channel area of the device has atomically flat or only one step with mono-atomic height by using the hydrogen-annealed wafer.