Impact of Total Ionizing Dose on a 4th Generation, 90 nm SiGe HBT Gaussian Pulse Generator

Abstract

We investigate the effects of total ionizing dose (TID) on a Gaussian pulse generator implemented in IBM's new 9HP SiGe BiCMOS platform, which combines 300 GHz fT SiGe HBTs and 90 nm CMOS. Total dose effects were examined using a 10-keV X-ray source. The effects of TID on the performance of the pulse generator were investigated with the pulse generator exhibiting a tpw variation of less than 7% for total dose of up to 3.0 Mrad. This circuit is intended for low-power autonomous high-altitude and space-based imaging radars.