Zachary E. Fleetwood

Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs

Ickhyun Song, Seung-Woo Jung, Nelson E. Lourenco et al. · IEEE Transactions on Nuclear Science · 2014 · 41 citations

Photonics, Electrical Engineering, Inverse-mode Sige Hbt +14

Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Laser-Induced Charge Deposition

Joel M. Hales, Ani Khachatrian, S. Büchner et al. · IEEE Transactions on Nuclear Science · 2018 · 40 citations

Engineering, Experimental Validation, Laser-plasma Interaction +19

Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs

Zachary E. Fleetwood, Nelson E. Lourenco, Adrian Ildefonso et al. · IEEE Transactions on Nuclear Science · 2016 · 33 citations

Device Modeling, Tcad Modeling, Electrical Engineering +13

Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology

Adilson S. Cardoso, Partha Sarathi Chakraborty, Nedeljko Karaulac et al. · IEEE Transactions on Nuclear Science · 2014 · 31 citations

Electrical Engineering, Engineering, Vlsi Design +11

Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

Zachary E. Fleetwood, Eleazar W. Kenyon, Nelson E. Lourenco et al. · IEEE Transactions on Device and Materials Reliability · 2014 · 28 citations

Radiation Hardening, Engineering, Vlsi Design +16