Zachary E. Fleetwood

Author

Georgia Institute of Technology ORCID

Also Known As

Fleetwood E. Zachary, Zachary E. Fleetwood

Publications

688

Citations

H-Index

Concepts

All Affiliations

Georgia Institute of Technology Defense Threat Reduction Agency United States Naval Research Laboratory Sotera Defense Solutions (United States)Georgia Tech Research Institute

About

Zachary E. Fleetwood is an author at Georgia Institute of Technology specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	25	525
2	Applied Physics	13	15	323
3	Computer Engineering	11	12	217
4	Medicine	1	1	28
5	Natural Sciences	1	1	17

Zachary E. Fleetwood

Publications

585

Citations

H-Index

Page 1

	Year	Citations
Design of Radiation-Hardened RF Low-Noise Amplifiers Using Inverse-Mode SiGe HBTs Ickhyun Song, Seung-Woo Jung, Nelson E. Lourenco, IEEE Transactions on Nuclear Science PhotonicsElectrical EngineeringInverse-mode Sige HbtEngineeringRf Semiconductor	2014	41
Experimental Validation of an Equivalent LET Approach for Correlating Heavy-Ion and Laser-Induced Charge Deposition Joel M. Hales, Ani Khachatrian, S. Büchner, IEEE Transactions on Nuclear Science EngineeringExperimental ValidationLaser-plasma InteractionCharge DepositionOptical Properties	2018	40
Using TCAD Modeling to Compare Heavy-Ion and Laser-Induced Single Event Transients in SiGe HBTs Zachary E. Fleetwood, Nelson E. Lourenco, Adrian Ildefonso, IEEE Transactions on Nuclear Science Device ModelingTcad ModelingElectrical EngineeringSingle Event TransientsEngineering	2016	33
Single-Event Transient and Total Dose Response of Precision Voltage Reference Circuits Designed in a 90-nm SiGe BiCMOS Technology Adilson S. Cardoso, Partha Sarathi Chakraborty, Nedeljko Karaulac, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringVlsi DesignCircuit-level Rhbd AlternativeRhbd Technique	2014	31
Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems Zachary E. Fleetwood, Eleazar W. Kenyon, Nelson E. Lourenco, IEEE Transactions on Device and Materials Reliability Radiation HardeningEngineeringVlsi DesignDevice IntegrationMulti-mrad Electronic Systems	2014	28
The Impact of Technology Scaling on the Single-Event Transient Response of SiGe HBTs Nelson E. Lourenco, Zachary E. Fleetwood, Adrian Ildefonso, IEEE Transactions on Nuclear Science EngineeringIntegrated CircuitsHigh-power LasersSemiconductor DeviceElectronic Engineering	2016	27
Optimizing Optical Parameters to Facilitate Correlation of Laser- and Heavy-Ion-Induced Single-Event Transients in SiGe HBTs Adrian Ildefonso, Zachary E. Fleetwood, George N. Tzintzarov, IEEE Transactions on Nuclear Science	2018	25
An Investigation of Single-Event Effects and Potential SEU Mitigation Strategies in Fourth-Generation, 90 nm SiGe BiCMOS Nelson E. Lourenco, Stanley D. Phillips, Troy England, IEEE Transactions on Nuclear Science EngineeringVlsi DesignSingle-event EffectsIntegrated CircuitsNm Sige Bicmos	2013	24
Potential Limitations on Integrated Silicon Photonic Waveguides Operating in a Heavy Ion Environment Patrick S. Goley, Zachary E. Fleetwood, John D. Cressler IEEE Transactions on Nuclear Science EngineeringIntegrated PhotonicsIntegrated CircuitsPotential LimitationsSilicon On Insulator	2017	24
Evaluation of Enhanced Low Dose Rate Sensitivity in Fourth-Generation SiGe HBTs Zachary E. Fleetwood, Adilson S. Cardoso, Ickhyun Song, IEEE Transactions on Nuclear Science Electrical EngineeringEngineeringTechnology GenerationRf SemiconductorHigh-frequency Device	2014	22

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