Optics Express · 2016 · 26 citations · 29 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight SourcesLight-emitting DiodesOptoelectronic DevicesOptoelectronic MaterialsSemiconductor Device MaterialsWide-bandgap SemiconductorsElectrical PropertiesElectrical Properties AnalysisGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesGreen Light-emitting DiodesLifetimesPower OutputSemiconductor Light-emitting Materials
We report significant improvement in optical and electrical properties of green InGaN/GaN light-emitting diodes (LEDs) by using Si-doped graded short-period InGaN/GaN superlattice (SiGSL) formed by so called indium-conversion technique. For comparison, a conventional LED without the superlattice (C-LED) and a LED with undoped graded superlattice (unGSL-LED) were prepared, respectively. The photoluminescence (PL) intensity of the SiGSL-LED was increased more than 3 times at room temperature (RT) as compared to C-LED. The PL intensity ratios of RT to 10K for the C-LED, unGSL-LED, and SiGSL-LED were measured to be 25, 40.9, and 47.5%, respectively. The difference in carrier lifetimes between 10K and RT for the SiGSL-LED is relatively small compared to that of the C-LED, which is consistent with the variation in PL intensity. The output power of a transistor-outline type SiGSL-LED was increased more than 2 times higher than that of the C-LED.
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Pit formation in GaInN quantum wells
Y. Chen, Tetsuya Takeuchi, Hiroshi Amano et al. · Applied Physics Letters · 1998 · 252 citations