Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching

Abstract

We demonstrate a nearly hysteresis-free sub60-mV/decade subthreshold swing (SS) operation in a p-type bulk metal-oxide-semiconductor field-effect transistor externally connected to a ferroelectric capacitor. The SS <;60 mV/decade is observed over three orders of magnitude (i.e., 10 pA/μm~10 nA/μm of drain current) and at large drain current levels. However, the extent of hysteresis is found to be strongly dependent on the drain voltage. At high drain voltages, large hysteresis occurs, indicating the influence of drain voltage in the charge balance with the ferroelectric capacitor.