Nitrogen incorporation in SnO<sub>2</sub> thin films grown by chemical vapor deposition

Jie Jiang, Yinmei Lu, B. Kramm, Fabian Michel, Christian T. Reindl, M. Kracht, Peter J. Klar, Bruno Meyer, Martin Eickhoff

physica status solidi (b) · 2016 · 20 citations · 59 references

Concepts

Abstract

The influence of nitrogen incorporation in high concentrations on the structural properties and morphology of SnO 2 –x N x thin films grown by chemical vapor deposition is studied. A decrease in crystallite size and a lattice expansion in SnO 2– x N x films with increasing x are found by X‐ray diffraction analysis and Raman spectroscopy. Substitutional nitrogen with a binding energy of 397.15 eV was detected by X‐ray photoelectron spectroscopy, attributed to the N 3 − ion in the SnN bond. The increase of the N atomic concentration x in SnO 2 –x N x films from 0 to 7.9 at.% without phase separation with increasing NH 3 flow rate during the deposition is accompanied by a decrease of O atomic concentration.

References

59