Avoiding loading effects and facet growth

Low temperature (800°C) recessed junction selective silicon-germanium source/drain technology for sub-70 nm CMOS

S. Gannavaram, N. Pesovic, Cem Öztürk · 2002 · 70 citations

Engineering, Electrical Engineering, Materials Science +17

Pattern sensitivity of selective Si1−<i>x</i>Ge<i>x</i> chemical vapor deposition: Pressure dependence

T. I. Kamins · Journal of Applied Physics · 1993 · 50 citations

Natural Sciences, Materials Engineering, Materials Science +13

Facet formation mechanism of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor deposition

Tohru Aoyama, Taeko Ikarashi, Keiko Miyanaga et al. · Journal of Crystal Growth · 1994 · 48 citations

Engineering, Materials Engineering, Materials Science +14

Pattern dependence in selective epitaxial Si1−<i>x</i>Ge<i>x</i> growth using reduced-pressure chemical vapor deposition

Sadayoshi Ito, T. Nakamura, Satoshi Nishikawa · Journal of Applied Physics · 1995 · 32 citations

Natural Sciences, Materials Engineering, Materials Science +14

Prospects for 200 GHz on silicon with SiGe heterojunction bipolar transistors

A. Gruhle · 2002 · 26 citations

Engineering, Electrical Engineering, Materials Science +17