Concepedia

In<sub>0.14</sub>Ga<sub>0.86</sub>As Solar Cells Grown by Molecular-Beam Epitaxy

Shingo Katsumoto, Akio Yamamoto, Masafumi Yamaguchi

Japanese Journal of Applied Physics · 1985 · 13 citations · 4 references

DOI

Concepts

Abstract

Etude des proprietes photovoltaiques de cellules solaires a In x Ga 1−x As, avec une bande interdite de 1,2 eV, preparees par epitaxie en jet moleculaire, et dans lesquelles on utilise des couches graduelles de 0,1 μm d'epaisseur. On decrit egalement les proprietes de ces cellules apres irradiation electronique

References

4

Application of scanning electron microscopy to determination of surface recombination velocity: GaAs

L. Jastrzȩbski, J. Łagowski, H. C. Gatos · Applied Physics Letters · 1975 · 174 citations

, , +16

6 0Co γ-ray and electron irradiation damage of GaAs single crystals and solar cells

Masafumi Yamaguchi, Chikara Amano · Journal of Applied Physics · 1983 · 35 citations

, , +17

Magnesium doping of efficient GaAs and Ga0.75In0.25As solar cells grown by metalorganic chemical vapor deposition

C. R. Lewis, C. W. Ford, J. G. Werthen · Applied Physics Letters · 1984 · 16 citations

, , +12

Ga0.80In0.20As 1.20-eV high quantum efficiency junction for multijunction solar cells

W. T. Dietze, M. J. Ludowise, P. E. Gregory · Applied Physics Letters · 1982 · 12 citations

, , +17