Electronics Letters · 1997 · 21 citations · 4 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsOptical Properties Of SemiconductorsOptical Properties Of SolidsOptical SourcesRare-earth-doped MaterialsSemiconductor Device MaterialsSemiconductor LasersDoping EffectsLaser Gain MaterialsOptical Gain In SemiconductorsOptical Gain MaterialsReflectivity
A high reflectivity GaAsSb/AlAsSb Bragg mirror lattice matched to InP is reported. Operation at 1.5 µm is obtained owing to a large Burstein-Moss shift of GaAsSb absorption caused by a strong N-doping up to 1019 cm-3. Peak reflectivity up to 94% has been measured with only 11.5 periods.
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Refractive index of Ga1−xAlxAs
Martin A. Afromowitz · Solid State Communications · 1974 · 418 citations