High reflectivity Te-doped GaAsSb/AlAsSbBragg mirror for 1.5 µm surface emitting lasers

Abstract

A high reflectivity GaAsSb/AlAsSb Bragg mirror lattice matched to InP is reported. Operation at 1.5 µm is obtained owing to a large Burstein-Moss shift of GaAsSb absorption caused by a strong N-doping up to 1019 cm-3. Peak reflectivity up to 94% has been measured with only 11.5 periods.