PSP-based scalable compact FinFET model

Abstract

A high-quality compact FinFET model is a prerequisite for initial circuit design and evaluation of these prospective replacements for conventional bulk MOSFETs in real circuits. Our PSP-based compact model for symmetric 3-terminal FinFETs with thin undoped or lightly doped body contains simple analytical expressions for currents and charges. This makes the model well suited for such circuit simulations. Yet, this surface potential based model offers an accurate description of not only the currents, but also of the (trans-)conductance and capacitances and is continuous over all operating conditions (subthreshold, linear, saturation). The model is fully scalable and will be demonstrated to describe a full range of device geometries, from the longchannel limit down to the shortest channels, with a single set of parameters.