Publication | Open Access
Leakage Current Degradation of Gallium Nitride Transistors Due to Heavy Ion Tests
32
Citations
3
References
2015
Year
Unknown Venue
Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature InstabilityApplied PhysicsDrain CurrentsLeakage Current DegradationM University CyclotronCommercial GalliumAluminum Gallium NitrideMicroelectronicsCategoryiii-v SemiconductorSemiconductor DeviceHeavy Ion Tests
Commercial gallium nitride high-electron mobility transistors are tested at Texas A&M University cyclotron. Degradation of gate and drain currents is characterized.
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