Metal‐organic CVD of Y₂O₃ Thin Films using Yttrium <i>tris</i>‐amidinates

Abstract

Thin films of Y 2 O 3 are deposited on Si(100) and Al 2 O 3 (0001) substrates via metal‐organic (MO)CVD for the first time using two closely related yttrium tris ‐amidinate compounds as precursors in the presence of oxygen in the temperature range 400–700 °C. The structural, morphological, and compositional features of the films are investigated in detail. At deposition temperatures of 500 °C and higher both the precursors yield polycrystalline Y 2 O 3 thin films in the cubic phase. The compositional analysis revealed the formation of nearly stoichiometric Y 2 O 3 . The optical band gaps are estimated using UV‐Vis spectroscopy. Preliminary electrical measurements are performed in the form of a metal oxide semiconductor (MOS) structure of Al/Y 2 O 3 /p‐Si/Ag. Leakage currents and dielectric constants are also determined.