An 80nm 4Gb/s/pin 32b 512Mb GDDR4 Graphics DRAM with Low-Power and Low-Noise Data-Bus Inversion

Abstract

A 4Gb/s/pin 32b parallel 512Mb GDDR4 SDRAM is implemented in an 80nm DRAM process. It employs a data-bus inversion coding scheme with an analog majority voter insensitive to mismatch, which reduces peak-to-peak jitter by 21 ps and voltage fluctuation by 68mV. A dual duty-cycle corrector is proposed to average duty error, and tuning is added to the auto-calibration of driver and termination impedance.