A new approach for improving operating margin of unipolar ReRAM using local minimu m of reset voltage

Abstract

We propose a new approach for improving the operating margin of Ta <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sub> /plasma oxidized TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> stacked unipolar ReRAM. It was found that the reset voltage (switching from low resistance state to high resistance state) can be minimized by using local minimum against the resistance of the low resistance state. In addition, weakening the plasma oxidation condition reduced the power consumption and the variation of reset voltage. Excellent operating margin and more than 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> switching cycle times was successfully demonstrated using the integrated device.