Electrical Properties of n‐Type CdSe

Abstract

Abstract The electrical properties of n‐type CdSe were studied over the temperature range of 4.2 to 300 °K. Measurements were made in both as‐grown crystals and crystals annealed under controlled Cd pressures. Hall effect measurements on low resistivity specimens indicate the presence of a donor level 0.014 eV below the conduction band, with concentrations typically ≈︁ 10 16 cm‐3. Analysis of the Hall mobility data indicates that the predominant scattering mechanism at room temperature and above is polar optical mode scattering. The magnetoresistance effects observed are consistent with the energy structure determined by previous optical studies. The transport properties exhibited typical characteristics of impurity band conduction at low temperatures (< 77 °K), including negative magnetoresistance.