Highly Optimized Nanocrystal-Based Split Gate Flash for High Performance and Low Power Microcontroller Applications

Abstract

We show a 90nm nanocrystal-based split gate embedded flash memory that is able to meet the speed, endurance and reliability requirements for 32-bit microcontroller products. A 3.4V operating window is achievable and the process is robust and repeatable across many lots. Erase after 10k cycles can be achieved in 5ms, long-term data retention of cycled arrays is not susceptible to SILC-induced charge loss mechanisms, and program disturb can meet the needs of flash and EEPROM.