2011 · 12 citations · 1 references
EngineeringComputer EngineeringElectrical EngineeringEmbedded SystemsMicroelectronicsSemiconductor DevicesEmbedded Memory BlocksIntegrated Circuit DesignMemory DevicesMemory Subsystem DesignNanoelectronicsEndurance OptimizationFlash MemoryFlash Memory DevicesFlash Memory ReliabilityHigh PerformanceLong-term Data RetentionMemory Circuit DesignNon-volatile Memory Design
We show a 90nm nanocrystal-based split gate embedded flash memory that is able to meet the speed, endurance and reliability requirements for 32-bit microcontroller products. A 3.4V operating window is achievable and the process is robust and repeatable across many lots. Erase after 10k cycles can be achieved in 5ms, long-term data retention of cycled arrays is not susceptible to SILC-induced charge loss mechanisms, and program disturb can meet the needs of flash and EEPROM.
1