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A 2-million-pixel CCD image sensor overlaid with an amorphous silicon photoconversion layer
32
Citations
3
References
1991
Year
Photonic SensorElectrical EngineeringPhotoelectric SensorEngineeringCalibrationData ConverterApplied PhysicsImage ProcessorComputer EngineeringVertical CcdIntegrated CircuitsInstrumentationRadiation ImagingOptoelectronicsCamera TechnologyOptical SensorsImage SensorHorizontal Ccd Register
A highly sensitive 2-million-pixel high-definition charge-coupled device (CCD) image sensor was developed that features an overlaid amorphous silicon photoconversion layer on an interline transfer-type CCD scanner. The device is adapted to the 16:9 aspect ratio. 1125 scanning lines and 2:1 interlace high-definition TV system. A dual-channel horizontal CCD register is used to reduce the operating frequency to one half of the 74.25-MHz readout frequency. A horizontal period signal storage memory (1H line memory) is provided between the vertical CCD register and the horizontal CCD register to provide the signal distribution from the vertical CCD to the horizontal CCD register during the 3.77- mu s short horizontal blanking interval. This device realized a 1000 TV line horizontal limiting resolution 210 nA/1x high sensitivity. Total random noise was found to be 52 electrons RMS and a 72-dB dynamic range was achieved.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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