Design of 60- and 77-GHz Narrow-Bandpass Filters in CMOS Technology

Abstract

This paper investigates the design and implementation of millimeter-wave narrow-bandpass filters in a standard 0.18- m CMOS technology. Filters with a measured 10% 3-dB bandwidth at 60 and 77 GHz are realized in a thin-film microstrip structure by using the lowest metallization layer as a ground plane. The impact of dissipation losses of the filters is also examined. It is found that the metallization losses in the coupled-line filter as well as the ground plane are the main reasons for the insertion loss.