Dithieno[2,3‐<i>d</i>;2′,3′‐<i>d</i>′]benzo[1,2‐<i>b</i>;4,5‐<i>b</i>′]dithiophene (DTBDT) as Semiconductor for High‐Performance, Solution‐Processed Organic Field‐Effect Transistors

Abstract

The facile synthesis of a new five-ring-fused pentacene analog with four symmetrically fused thiophene ring units (Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene, Cn-DTBDT) is presented. After aligning this material from solution, thin films for organic field-effect transistors were obtained, resulting in excellent hole mobilities of up to 1.7 cm2V−1s−1, and on/off ratio of 107. Detailed facts of importance to specialist readers are published as ”Supporting Information”. Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.