Facile Synthesis of Highly π-Extended Heteroarenes, Dinaphtho[2,3-<i>b</i>:2‘,3‘-<i>f</i>]chalcogenopheno[3,2-<i>b</i>]chalcogenophenes, and Their Application to Field-Effect Transistors

Abstract

A facile three-step synthetic procedure for highly π-extended heteroarenes, dinaphtho[2,3- b:2‘,3‘- f ]thieno[3,2- b ]thiophene (DNTT) and dinaphtho[2,3- b:2‘,3‘- f ]selenopheno[3,2- b ]selenophene (DNSS), was established. Solution UV−vis spectra and electrochemistry indicated that they have relatively low-lying HOMO levels and large HOMO−LUMO energy gaps. OFET devices fabricated with evaporated thin-films of DNTT and DNSS showed excellent FET characteristics in air, and the highest field-effect mobility of DNTT- and DNSS-based OFETs is 2.9 and 1.9 cm 2 V -1 s -1, respectively.