IEEE Transactions on Device and Materials Reliability · 2005 · 53 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsIii-v SemiconductorsLight-emitting DiodesSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsDevice PackagingElectrostatic DischargeGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesGallium Nitride Power DevicesLight-emitting DevicesLight-emitting Diode Materials
GaN-based light emitting diodes (LEDs) with p-cap layers grown at various temperatures were fabricated. It was found that the LED with 900/spl deg/C-grown p-cap layer could only endure negative 1100 V electrostatic discharge (ESD) pulses while the LED with 1040/spl deg/C-grown p-cap layer could endure ESD pulses as high as negative 3500 V. It was also found that the ESD performances of the LEDs with 900 and 1040/spl deg/C-grown p-cap layers were limited by the V-shape defects and the bonding pad design, respectively.
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