Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing

Abstract

Separation by implantation of oxygen and nitrogen (SIMON) silicon-on-insulator (SOI) materials were fabricated by sequential oxygen and nitrogen implantation with annealing after each implantation. Analyses of SIMS, XTEM and HRTEM were performed. The results show that superior buried insulating multi-layers were well formed and the possible mechanism is discussed. The remarkable total-dose irradiation tolerance of SIMON materials was confirmed by few shifts of drain leakage current–gate source voltage (I–V) curves of PMOS transistors fabricated on SIMON materials before and after irradiation.