High-Temperature Stable HfLaON p-MOSFETs With High-Work-Function $\hbox{Ir}_{3}\hbox{Si}$ Gate

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> We report a novel 1000 <formula formulatype="inline"><tex>$^{\circ}\hbox{C}$</tex></formula> stable HfLaON p-MOSFET with <formula formulatype="inline"><tex>$\hbox{Ir}_{3}\hbox{Si}$</tex></formula> gate. Low leakage current of <formula formulatype="inline"><tex>$\hbox{1.8}\times \hbox{10}^{-5}\ \hbox{A/cm}^{2}$</tex></formula> at 1 V above flat-band voltage, good effective work function of 5.08 eV, and high mobility of 84 <formula formulatype="inline"><tex>$\hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$</tex></formula> are simultaneously obtained at 1.6 nm equivalent oxide thickness. This gate-first p-MOSFET process with self-aligned ion implant and 1000 <formula formulatype="inline"><tex>$^{\circ}\hbox{C}$</tex></formula> rapid thermal annealing is fully compatible to current very large scale integration fabrication lines. </para>