Nonradiative carrier loss and temperature sensitivity of threshold in 1.27 μm (GaIn)(AsP)/InP d.h. lasers

Abstract

A temperature-dependent nonradiative carrier loss is identified in 1.27 μm (GaIn)(AsP)/InP d.h. lasers as being responsible for the high sensitivity of threshold current to temperature. It varies according to an activation energy of between 0.09 and 0.13 eV and is superlinear in carrier concentration.