Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster - Concepedia

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Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

44

Citations

19

References

2013

Year

Thomas Quinci, Jithesh Kuyyalil, T. Nguyen Thanh, Yanping Wang, Samy Almosni, Antoine Létoublon, Tony Rohel, K. Tavernier, Nicolas Chevalier, Olivier Dehaese,

Journal of Crystal Growth

Materials ScienceEngineeringSurface ScienceApplied PhysicsSemiconductor MaterialSemiconductor Device FabricationMolecular Beam EpitaxyEpitaxial GrowthEpitaxial GapUhvcvd–mbe Growth ClusterDefects Limitation

References

	Year	Citations

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