GaInAs/InP composite channel HEMT's

Abstract

Al/sub 0.6/In/sub 0.4/As Schottky layers have been combined with GaInAs/InP composite channels. The effect of changing the thickness of the Ga/sub 0.47/In/sub 0.53/As channel on the DC and RF characteristics of the HEMTs was investigated. Preliminary results indicate that GaInAsP/InP composite channel HEMTs with a Ga/sub 0.47/In/sub 0.53/As channel thickness of 50 AA or less show improvement in the drain-to-source breakdown voltage without sacrificing performance.