Embedded-mask-methods for mm-scale multi-layer vertical/slanted Si structures

Abstract

Complicated deep-etched structures having multiple heights and vertical/slanted walls have realized by fully-silicon-based batch fabrication process, which only needs lithography on a flat surface. Arbitrary numbers of mask layers were laminated on the initial surface of a substrate and deep-RIE, LOCOS or anisotropic wet etching were performed to make microstructures using each mask layer subsequently.